Please use this identifier to cite or link to this item:
https://hdl.handle.net/2440/104360
Citations | ||
Scopus | Web of Science® | Altmetric |
---|---|---|
?
|
?
|
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tettamanzi, G. | - |
dc.contributor.author | Hile, S. | - |
dc.contributor.author | House, M. | - |
dc.contributor.author | Fuechsle, M. | - |
dc.contributor.author | Rogge, S. | - |
dc.contributor.author | Simmons, M. | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | ACS Nano, 2017; 11(3):2444-2451 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.issn | 1936-086X | - |
dc.identifier.uri | http://hdl.handle.net/2440/104360 | - |
dc.description.abstract | The ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy ≈9 meV, consistent with the first excited state of a single P donor in silicon. The relaxation rate of this first excited state to the ground state is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under radio frequency excitations. | - |
dc.description.statementofresponsibility | Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House, Martin Fuechsle, Sven Rogge, and Michelle Y. Simmons | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.rights | Copyright © 2016 American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes | - |
dc.source.uri | http://dx.doi.org/10.1021/acsnano.6b06362 | - |
dc.subject | Silicon; single atom transistor; phosphorus; monolayer-doped electrodes; pulse spectroscopy; relaxation rates | - |
dc.title | Probing the quantum states of a single atom transistor at microwave frequencies | - |
dc.type | Journal article | - |
dc.identifier.doi | 10.1021/acsnano.6b06362 | - |
dc.relation.grant | http://purl.org/au-research/grants/arc/DE120100702 | - |
pubs.publication-status | Published | - |
dc.identifier.orcid | Tettamanzi, G. [0000-0002-3209-0632] | - |
Appears in Collections: | Aurora harvest 3 IPAS publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
hdl_104360.pdf | Published version | 3.98 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.