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Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/105470
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dc.contributor.authorAmirsoleimani, A.-
dc.contributor.authorShamsi, J.-
dc.contributor.authorAhmadi, M.-
dc.contributor.authorAhmadi, A.-
dc.contributor.authorAlirezaee, S.-
dc.contributor.authorMohammadi, K.-
dc.contributor.authorKarami, M.A.-
dc.contributor.authorYakopcic, C.-
dc.contributor.authorKavehei, O.-
dc.contributor.authorAl-Sarawi, S.F.-
dc.date.issued2017-
dc.identifier.citationMicroelectronics Journal, 2017; 65:49-57-
dc.identifier.issn0026-2692-
dc.identifier.issn1879-2391-
dc.identifier.urihttp://hdl.handle.net/2440/105470-
dc.description.abstractAbstract not available-
dc.description.statementofresponsibilityAmirali Amirsoleimani, Jafar Shamsi, Majid Ahmadi, Arash Ahmadi, Shahpour Alirezaee, Karim Mohammadi, Mohammad Azim Karami, Chris Yakopcic, Omid Kavehei, Said Al-Sarawi-
dc.language.isoen-
dc.publisherMackintosh Publications-
dc.rights© 2017 Elsevier Ltd. All rights reserved.-
dc.source.urihttp://dx.doi.org/10.1016/j.mejo.2017.05.006-
dc.subjectMemristor; Model; Hybrid circuit; SPICE; Tunneling; Thermionic; Ohmic current-
dc.titleAccurate charge transport model for nanoionic memristive devices-
dc.typeJournal article-
dc.identifier.doi10.1016/j.mejo.2017.05.006-
pubs.publication-statusPublished-
dc.identifier.orcidAl-Sarawi, S.F. [0000-0002-3242-8197]-
Appears in Collections:Aurora harvest 8
Electrical and Electronic Engineering publications

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