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https://hdl.handle.net/2440/107230
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Type: | Journal article |
Title: | Few electron limit of n-type metal oxide semiconductor single electron transistors |
Author: | Prati, E. De Michielis, M. Belli, M. Cocco, S. Fanciulli, M. Kotekar-Patil, D. Ruoff, M. Kern, D. Wharam, D. Verduijn, J. Tettamanzi, G. Rogge, S. Roche, B. Wacquez, R. Jehl, X. Vinet, M. Sanquer, M. |
Citation: | Nanotechnology, 2012; 23(21):215204-1-215204-5 |
Publisher: | IOP Publishing |
Issue Date: | 2012 |
ISSN: | 0957-4484 1361-6528 |
Statement of Responsibility: | Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P Kern, David A Wharam, Jan Verduijn, Giuseppe C Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet and Marc Sanquer |
Abstract: | We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices. |
Keywords: | Nanotechnology |
Rights: | © 2012 IOP Publishing Ltd Printed in the UK & the USA |
DOI: | 10.1088/0957-4484/23/21/215204 |
Grant ID: | http://purl.org/au-research/grants/arc/FT100100589 http://purl.org/au-research/grants/arc/DE120100702 |
Published version: | http://dx.doi.org/10.1088/0957-4484/23/21/215204 |
Appears in Collections: | Aurora harvest 8 Electrical and Electronic Engineering publications |
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