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https://hdl.handle.net/2440/12522
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DC Field | Value | Language |
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dc.contributor.author | Atanackovic, P. | - |
dc.contributor.author | Steele, T. | - |
dc.contributor.author | Munch, J. | - |
dc.date.issued | 1997 | - |
dc.identifier.citation | IEEE Journal of Quantum Electronics, 1997; 33(3):393-403 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.uri | http://hdl.handle.net/2440/12522 | - |
dc.description.abstract | Optoelectronic properties of asymmetrically strained II-VI CdZnTe single-quantum-well structures grown by molecular-beam epitaxy are reported. Indium doping CdZnTe n-type using a two-dimensional electron gas heterostructure acheived a carrier mobility of 5000 cm2·V-1·-1 at 40 K. A shallow donor ionization energy of 14.5 meV was determined from Hall effect measurements. Fabrication of a large-areamesa heterostructure device allowed us to investigate exciton absorption of the mixed type-I and type-II single quantum well. Control of the electron concentration in the quantum well allows optical absorption modulation using both the quantum-confined Stark effect (QCSE) and phase-space absorption quenching. Separation of electron and hole photocurrents in different layers is demonstrated and results in photogain. A heavy-hole red-shift of 9.9 meV/V due to the reverse QCSE is reported. | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | - |
dc.source.uri | http://dx.doi.org/10.1109/3.556008 | - |
dc.title | Optoelectronic Properties of n-Type CdZnTe 2-DEG Single-Quantum-Well Heterostructures | - |
dc.type | Journal article | - |
dc.identifier.doi | 10.1109/3.556008 | - |
pubs.publication-status | Published | - |
Appears in Collections: | Aurora harvest 2 Environment Institute publications Physics publications |
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