Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/28361
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Type: Conference paper
Title: A new current controlled very high value floating CMOS resistor
Author: Al-Sarawi, S.
Citation: Electronics and Structures for MEMS II, Neil W. Bergmann, Derek Abbott, Alex Hariz, Vijay K. Varadan (eds.) : pp. 231-240
Publisher: THE SOCIETY OF PHOTO-OPTICAL ENGINEERING
Publisher Place: PO BOX 10 BELLINGHAM WASHINGTON USA
Issue Date: 2001
Series/Report no.: Proceedings of SPIE--the International Society for Optical Engineering ; 4591.
ISBN: 0819443212
ISSN: 0277-786X
Conference Name: Electronics and Structures for MEMS II (2nd : 2001 : Adelaide, Australia)
Editor: Bergmann, N.
Abstract: A new current controlled very high value resistor is presented and discussed. The new very high value floating resistor is built using a new topology that converts a grounded resistor or conductance to floating one. The output conductance of two matched transistors in the saturation region of operation is utilized for the resistor implementation. Hence, resistance value in the range of G(Omega) is achievable through a reasonable bias current in the range of 500 nA with small silicon area. The linearity of the new resistor is less than +/- 1 percent (THD) for a 2 Vpp input signal in a 5 volt 1.2micrometers CMOS technology. The resistor is useful in the design of a very low frequency bandpass filter for artificial insect vision chip and pacemaker applications.
Description: ©2003 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
DOI: 10.1117/12.449171
Published version: http://dx.doi.org/10.1117/12.449171
Appears in Collections:Aurora harvest 6
Electrical and Electronic Engineering publications

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