Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/76417
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dc.contributor.authorKarami Horestani, A.-
dc.contributor.authorFumeaux, C.-
dc.contributor.authorAl-Sarawi, S.-
dc.contributor.authorAbbott, D.-
dc.date.issued2012-
dc.identifier.citationProceedings of the 37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012.-
dc.identifier.isbn9781467315975-
dc.identifier.issn2162-2027-
dc.identifier.issn2162-2035-
dc.identifier.urihttp://hdl.handle.net/2440/76417-
dc.descriptionExtent: 2p.-
dc.description.abstractThis paper proposes a characterization method for the electromagnetic properties of thin films, based on the resonance properties of a slow-wave coplanar strips resonator. It is shown that using the resonant frequency and the quality factor of the resonator, permittivity and loss tangent of an unknown thin film at high frequencies such as mm-wave frequencies can be accurately determined. The method is validated by characterizing a silicon dioxide layer in an standard CMOS process as the thin film under test.-
dc.description.statementofresponsibilityAli K. Horestani, Christophe Fumeaux, Said Al-Sarawi and Derek Abbott-
dc.language.isoen-
dc.publisherIEEE-
dc.relation.ispartofseriesInternational Conference on Infrared Millimeter and Terahertz Waves-
dc.rights©2012 IEEE-
dc.source.urihttp://dx.doi.org/10.1109/irmmw-thz.2012.6379510-
dc.titleCharacterization of the complex permittivity of thin films using a slow-wave coplanar strips resonator-
dc.typeConference paper-
dc.contributor.conferenceInternational Conference on Infrared, Millimeter and Terahertz Waves (37th : 2012 : Wollongong, Australia)-
dc.identifier.doi10.1109/IRMMW-THz.2012.6379510-
dc.publisher.placeUSA-
pubs.publication-statusPublished-
dc.identifier.orcidFumeaux, C. [0000-0001-6831-7213]-
dc.identifier.orcidAl-Sarawi, S. [0000-0002-3242-8197]-
dc.identifier.orcidAbbott, D. [0000-0002-0945-2674]-
Appears in Collections:Aurora harvest 4
Electrical and Electronic Engineering publications

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