Adelaide Research & Scholarship
Please use this identifier to cite or link to this item:
https://hdl.handle.net/2440/88050
| Citations | ||
| Scopus | Web of Science® | Altmetric |
|---|---|---|
|
?
|
?
|
|
| Type: | Journal article |
| Title: | Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures |
| Author: | Mouneyrac, D. Hartnett, J. Le Floch, J. Tobar, M. Cros, D. Krupka, J. |
| Citation: | Journal of Applied Physics, 2010; 108(10):104107-1-104107-6 |
| Publisher: | American Institute of Physics |
| Issue Date: | 2010 |
| ISSN: | 0021-8979 1089-7550 |
| Statement of Responsibility: | David Mouneyrac, John G. Hartnett, Jean-Michel Le Floch, Michael E. Tobar, Dominique Cros, and Jerzy Krupka |
| Abstract: | Abstract not available |
| Rights: | © 2010 American Institute of Physics |
| DOI: | 10.1063/1.3514009 |
| Grant ID: | ARC |
| Published version: | http://dx.doi.org/10.1063/1.3514009 |
| Appears in Collections: | Aurora harvest 7 Physics publications |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.