Please use this identifier to cite or link to this item: https://hdl.handle.net/2440/121686
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dc.contributor.authorZhu, C.-
dc.contributor.authorSun, Y.-
dc.contributor.authorChao, D.-
dc.contributor.authorWang, X.-
dc.contributor.authorYang, P.-
dc.contributor.authorZhang, X.-
dc.contributor.authorHuang, H.-
dc.contributor.authorZhang, H.-
dc.contributor.authorFan, H.J.-
dc.date.issued2016-
dc.identifier.citationNano Energy, 2016; 26:1-6-
dc.identifier.issn2211-2855-
dc.identifier.issn2211-3282-
dc.identifier.urihttp://hdl.handle.net/2440/121686-
dc.description.abstractA high working voltage and fast charging/discharging capability are important to a supercapacitor device in order to achieve decent energy densities with high power. In this work, we report 2.0 V quasi-solid-state symmetric capacitive device based on Fe2N-Ti2N (FTN) core-shell nanorod array electrodes. Through a surface protection by a thin and ultra-stable Ti2N shell, Fe2N converted from its oxyhydroxide precursor inhibits the original nanorod structure. Due to advantageous features of these core-shell metal nitride electrodes (e.g., high conductivity, structure stability, direct current path), the symmetric device permits ultrahigh scan rates (up to 50 V s−1) and delivers fairly stable capacitance in long-term cycles (~82 F g−1 with ~99% capacitance retention in 20,000 cycles). As a result, the supercapacitor exhibits an impressive energy density of ~48.5 W h kg−1 at the power of 2700 W kg−1. These results demonstrate the potentialities of metal nitride nanorods array for high energy density capacitive device.-
dc.description.statementofresponsibilityChangrong Zhu, Yanfeng Sun, Dongliang Chao, Xinghui Wang, Peihua Yang, Xiao Zhang, Hui Huang, Hua Zhang, Hong Jin Fan-
dc.language.isoen-
dc.publisherElsevier-
dc.rights© 2016 Elsevier Ltd. All rights reserved.-
dc.source.urihttp://dx.doi.org/10.1016/j.nanoen.2016.04.056-
dc.subjectSymmetric supercapacitor; high working voltage; metal nitride; electrochemical capacitor; atomic layer deposition-
dc.titleA 2.0 V capacitive device derived from shape-preserved metal nitride nanorods-
dc.typeJournal article-
dc.identifier.doi10.1016/j.nanoen.2016.04.056-
pubs.publication-statusPublished-
dc.identifier.orcidChao, D. [0000-0001-7793-0044]-
Appears in Collections:Aurora harvest 8
Chemical Engineering publications

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