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https://hdl.handle.net/2440/121686
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dc.contributor.author | Zhu, C. | - |
dc.contributor.author | Sun, Y. | - |
dc.contributor.author | Chao, D. | - |
dc.contributor.author | Wang, X. | - |
dc.contributor.author | Yang, P. | - |
dc.contributor.author | Zhang, X. | - |
dc.contributor.author | Huang, H. | - |
dc.contributor.author | Zhang, H. | - |
dc.contributor.author | Fan, H.J. | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Nano Energy, 2016; 26:1-6 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.issn | 2211-3282 | - |
dc.identifier.uri | http://hdl.handle.net/2440/121686 | - |
dc.description.abstract | A high working voltage and fast charging/discharging capability are important to a supercapacitor device in order to achieve decent energy densities with high power. In this work, we report 2.0 V quasi-solid-state symmetric capacitive device based on Fe2N-Ti2N (FTN) core-shell nanorod array electrodes. Through a surface protection by a thin and ultra-stable Ti2N shell, Fe2N converted from its oxyhydroxide precursor inhibits the original nanorod structure. Due to advantageous features of these core-shell metal nitride electrodes (e.g., high conductivity, structure stability, direct current path), the symmetric device permits ultrahigh scan rates (up to 50 V s−1) and delivers fairly stable capacitance in long-term cycles (~82 F g−1 with ~99% capacitance retention in 20,000 cycles). As a result, the supercapacitor exhibits an impressive energy density of ~48.5 W h kg−1 at the power of 2700 W kg−1. These results demonstrate the potentialities of metal nitride nanorods array for high energy density capacitive device. | - |
dc.description.statementofresponsibility | Changrong Zhu, Yanfeng Sun, Dongliang Chao, Xinghui Wang, Peihua Yang, Xiao Zhang, Hui Huang, Hua Zhang, Hong Jin Fan | - |
dc.language.iso | en | - |
dc.publisher | Elsevier | - |
dc.rights | © 2016 Elsevier Ltd. All rights reserved. | - |
dc.source.uri | http://dx.doi.org/10.1016/j.nanoen.2016.04.056 | - |
dc.subject | Symmetric supercapacitor; high working voltage; metal nitride; electrochemical capacitor; atomic layer deposition | - |
dc.title | A 2.0 V capacitive device derived from shape-preserved metal nitride nanorods | - |
dc.type | Journal article | - |
dc.identifier.doi | 10.1016/j.nanoen.2016.04.056 | - |
pubs.publication-status | Published | - |
dc.identifier.orcid | Chao, D. [0000-0001-7793-0044] | - |
Appears in Collections: | Aurora harvest 8 Chemical Engineering publications |
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